2020
|
T D Bucio, C Lacava, M Clementi, J Faneca, I Skandalos, A Baldycheva, M Galli, K Debnath, P Petropoulos, F Gardes Silicon Nitride Photonics for the Near-Infrared Journal Article IEEE Journal of Selected Topics in Quantum Electronics, 26 (2), 2020. Abstract | Links | Tags: silicon nitride, Silicon photonics, silicon-rich @article{Bucio2020,
title = {Silicon Nitride Photonics for the Near-Infrared},
author = {T D Bucio and C Lacava and M Clementi and J Faneca and I Skandalos and A Baldycheva and M Galli and K Debnath and P Petropoulos and F Gardes},
doi = {10.1109/JSTQE.2019.2934127},
year = {2020},
date = {2020-01-01},
journal = {IEEE Journal of Selected Topics in Quantum Electronics},
volume = {26},
number = {2},
abstract = {In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (textless350 ^$backslash$circC) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 $backslash$mum wavelength range.},
keywords = {silicon nitride, Silicon photonics, silicon-rich},
pubstate = {published},
tppubtype = {article}
}
In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (textless350 ^$backslash$circC) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 $backslash$mum wavelength range. |
2019
|
P Minzioni, C Lacava, T Tanabe, J Dong, X Hu, G Csaba, W Porod, G Singh, A E Willner, A Almaiman, J Laurat, J Nunn Roadmap on all-optical processing Journal Article Journal of Optics (United Kingdom), 21 (6), 2019. Abstract | Links | Tags: silicon nitride, Silicon photonics, surface coupler, transceiver, wavelength conversion, wavelength converter @article{Minzioni2019,
title = {Roadmap on all-optical processing},
author = {P Minzioni and C Lacava and T Tanabe and J Dong and X Hu and G Csaba and W Porod and G Singh and A E Willner and A Almaiman and J Laurat and J Nunn},
doi = {10.1088/2040-8986/ab0e66},
year = {2019},
date = {2019-01-01},
journal = {Journal of Optics (United Kingdom)},
volume = {21},
number = {6},
abstract = {The ability to process optical signals without passing into the electrical domain has always attracted the attention of the research community. Processing photons by photons unfolds new scenarios, in principle allowing for unseen signal processing and computing capabilities. Optical computation can be seen as a large scientific field in which researchers operate, trying to find solutions to their specific needs by different approaches; although the challenges can be substantially different, they are typically addressed using knowledge and technological platforms that are shared across the whole field. This significant know-how can also benefit other scientific communities, providing lateral solutions to their problems, as well as leading to novel applications. The aim of this Roadmap is to provide a broad view of the state-of-the-art in this lively scientific research field and to discuss the advances required to tackle emerging challenges, thanks to contributions authored by experts affiliated to both academic institutions and high-tech industries. The Roadmap is organized so as to put side by side contributions on different aspects of optical processing, aiming to enhance the cross-contamination of ideas between scientists working in three different fields of photonics: optical gates and logical units, high bit-rate signal processing and optical quantum computing. The ultimate intent of this paper is to provide guidance for young scientists as well as providing research-funding institutions and stake holders with a comprehensive overview of perspectives and opportunities offered by this research field.},
keywords = {silicon nitride, Silicon photonics, surface coupler, transceiver, wavelength conversion, wavelength converter},
pubstate = {published},
tppubtype = {article}
}
The ability to process optical signals without passing into the electrical domain has always attracted the attention of the research community. Processing photons by photons unfolds new scenarios, in principle allowing for unseen signal processing and computing capabilities. Optical computation can be seen as a large scientific field in which researchers operate, trying to find solutions to their specific needs by different approaches; although the challenges can be substantially different, they are typically addressed using knowledge and technological platforms that are shared across the whole field. This significant know-how can also benefit other scientific communities, providing lateral solutions to their problems, as well as leading to novel applications. The aim of this Roadmap is to provide a broad view of the state-of-the-art in this lively scientific research field and to discuss the advances required to tackle emerging challenges, thanks to contributions authored by experts affiliated to both academic institutions and high-tech industries. The Roadmap is organized so as to put side by side contributions on different aspects of optical processing, aiming to enhance the cross-contamination of ideas between scientists working in three different fields of photonics: optical gates and logical units, high bit-rate signal processing and optical quantum computing. The ultimate intent of this paper is to provide guidance for young scientists as well as providing research-funding institutions and stake holders with a comprehensive overview of perspectives and opportunities offered by this research field. |
2017
|
T Domínguez Bucio, A Z Khokhar, C Lacava, S Stankovic, G Z Mashanovich, P Petropoulos, F Y Gardes Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications Journal Article Journal of Physics D: Applied Physics, 50 (2), 2017. Abstract | Links | Tags: nonlinear optics, nonlinear waveguides, silicon nitride, Silicon photonics, silicon-rich @article{DominguezBucio2017,
title = {Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications},
author = {T {Domínguez Bucio} and A Z Khokhar and C Lacava and S Stankovic and G Z Mashanovich and P Petropoulos and F Y Gardes},
doi = {10.1088/1361-6463/50/2/025106},
year = {2017},
date = {2017-01-01},
journal = {Journal of Physics D: Applied Physics},
volume = {50},
number = {2},
abstract = {SiNx layers intended for photonic applications are typically fabricated using LPCVD and PECVD. These techniques rely on high-temperature processing (textgreater400 °C) to obtain low propagation losses. An alternative version of PECVD SiNx layers deposited at temperatures below 400 °C with a recipe that does not use ammonia (NH3-free PECVD) was previously demonstrated to be a good option to fabricate strip waveguides with propagation losses textless3 dB cm-1. We have conducted a systematic investigation of the influence of the deposition parameters on the material and optical properties of NH3-free PECVD SiNx layers fabricated at 350 °C using a design of experiments methodology. In particular, this paper discusses the effect of the SiH4 flow, RF power, chamber pressure and substrate on the structure, uniformity, roughness, deposition rate, refractive index, chemical composition, bond structure and H content of NH3-free PECVD SiNx layers. The results show that the properties and the propagation losses of the studied SiNx layers depend entirely on their compositional N/Si ratio, which is in fact the only parameter that can be directly tuned using the deposition parameters along with the film uniformity and deposition rate. These observations provide the means to optimise the propagation losses of the layers for photonic applications through the deposition parameters. In fact, we have been able to fabricate SiNx waveguides with H content textless20%, good uniformity and propagation losses of 1.5 dB cm-1 at 1550 nm and textless1 dB cm-1 at 1310 nm. As a result, this study can potentially help optimise the properties of the studied SiNx layers for different applications.},
keywords = {nonlinear optics, nonlinear waveguides, silicon nitride, Silicon photonics, silicon-rich},
pubstate = {published},
tppubtype = {article}
}
SiNx layers intended for photonic applications are typically fabricated using LPCVD and PECVD. These techniques rely on high-temperature processing (textgreater400 °C) to obtain low propagation losses. An alternative version of PECVD SiNx layers deposited at temperatures below 400 °C with a recipe that does not use ammonia (NH3-free PECVD) was previously demonstrated to be a good option to fabricate strip waveguides with propagation losses textless3 dB cm-1. We have conducted a systematic investigation of the influence of the deposition parameters on the material and optical properties of NH3-free PECVD SiNx layers fabricated at 350 °C using a design of experiments methodology. In particular, this paper discusses the effect of the SiH4 flow, RF power, chamber pressure and substrate on the structure, uniformity, roughness, deposition rate, refractive index, chemical composition, bond structure and H content of NH3-free PECVD SiNx layers. The results show that the properties and the propagation losses of the studied SiNx layers depend entirely on their compositional N/Si ratio, which is in fact the only parameter that can be directly tuned using the deposition parameters along with the film uniformity and deposition rate. These observations provide the means to optimise the propagation losses of the layers for photonic applications through the deposition parameters. In fact, we have been able to fabricate SiNx waveguides with H content textless20%, good uniformity and propagation losses of 1.5 dB cm-1 at 1550 nm and textless1 dB cm-1 at 1310 nm. As a result, this study can potentially help optimise the properties of the studied SiNx layers for different applications. |
C Lacava, S Stankovic, A Khokhar, T Bucio, F Gardes, G Reed, D Richardson, P Petropoulos Si-rich Silicon Nitride for Nonlinear Signal Processing Applications Journal Article Scientific Reports, 7 (1), 2017. Abstract | Links | Tags: nonlinear optics, silicon nitride, Silicon photonics, silicon-rich @article{Lacava2017,
title = {Si-rich Silicon Nitride for Nonlinear Signal Processing Applications},
author = {C Lacava and S Stankovic and A Khokhar and T Bucio and F Gardes and G Reed and D Richardson and P Petropoulos},
doi = {10.1038/s41598-017-00062-6},
year = {2017},
date = {2017-01-01},
journal = {Scientific Reports},
volume = {7},
number = {1},
abstract = {Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (∼1.5 dB/cm) and enhanced Kerr nonlinear response (Re$gamma$ = 16 Wm-1). Thanks to these properties, our nonlinear waveguides are able to produce a $pi$ nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.},
keywords = {nonlinear optics, silicon nitride, Silicon photonics, silicon-rich},
pubstate = {published},
tppubtype = {article}
}
Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (∼1.5 dB/cm) and enhanced Kerr nonlinear response (Re$gamma$ = 16 Wm-1). Thanks to these properties, our nonlinear waveguides are able to produce a $pi$ nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications. |
